9780195170153

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Operation and Modeling of the MOS Transistor has become a standard in academia and industry. The book provides a thorough treatment of the MOS transistor-the key element of most modern microelectronic chips. The Third Edition of this well respected book is fully updated, making several key improvements in content, organization and pedagogy. The text has also been enhanced by changing notation to standard units of measurement, introducing an "Overview of the MOS Transistor" in the first chapter, and increasing the number of examples.

New to this edition:

* Energy bands and the energy barrier viewpoint are integrated into the discussion in a smooth, simple manner

* Expanded discussion of small-dimension effects, including velocity saturation, drain-induced barrier lowering, ballistic operation, polysilicon depletion, quantum effects, gate tunneling current, and gate-induced drain leakage

* Expanded discussion of small-signal modeling, including gate and substrate current modeling and flicker noise

* New chapter on substrate nonuniformity and structural effects, discussing transversal and lateral (halo) doping nonuniformity, stress and well proximity effects, and statistical variability

* A completely re-written chapter on modeling for circuit simulation, covering the considerations and pitfalls in the development of models for computer-aided design

* Extensively updated bibliography

* An accompanying website includes additional details not covered in the text, as well as model computer code

Yannis Tsividis received the B.S. degree from the University of Minnesota, Minneapolis, in 1972, and the M.S. and Ph.D. degrees from the University of California, Berkeley, in 1973 and 1976, respectively.
His involvement with MOS transistors began in the early seventies as part of his industrial and doctoral work. In 1975, to prove the feasibility of MOS technology for analog and mixed-signal integrated circuits, he designed and built the first fully integrated MOS operational amplifier and demonstrated its use in a PCM codec. Since that time, much of his work has focused on device and circuit issues in the merging of analog and digital circuits on the same chip. In addition to this book, he has written Mixed Analog-Digital Devices and Technology (World Scientific, 2002) and has edited several other books. He is the inventor/coinventor in over 20 patents.
Dr. Tsividis is Charles Batchelor Professor of Electrical Engineering at Columbia University in New York. He has also taught, as part of regular or visiting appointments, at the University of California, Berkeley, the Massachusetts Institute of Technology, and the National Technical University of Athens. He has worked for Motorola Semiconductor and for AT&T Bell Laboratories.
Dr. Tsividis received the 1984 IEEE W.R.G. Baker Award for the best IEEE publication, and is recipient or co-recipient of best paper awards from the European Solid-State Circuits Conference in 1986, the IEEE International Solid-State Circuits Conference in 2003, and the IEEE Circuits and Systems Society (Darlington Award, 1987; Guillemin-Cauer Award, 1998 and 2008). He has received Columbia's Presidential Award for Outstanding Teaching in 2003, and the IEEE Undergraduate Teaching Award in 2005. He is a Fellow of the IEEE, and received the IEEE Gustav Robert Kirchhoff Award in 2007.
Colin McAndrew received the B.E. (Hons) degree in Electrical Engineering from Monash University, Victoria, Australia, in 1978 and the M.A.Sc. and Ph.D. degrees in Systems Design Engineering from the University of Waterloo, Ontario, Canada, in 1982 and 1984, respectively.
He became involved with modeling semiconductor devices for circuit simulation in 1987 and has contributed to the development of models for MOS, bipolar, and passive devices. He developed the backward-propagation-of-variation (BPV) technique for statistical modeling and has been a primary advocate of the use of Verilog-A and compilers for device modeling.
He is a Fellow of the IEEE, was the recipient of the Ian Langlands Medal of the Institute of Engineers of Australia ,1978, and was recognized with the IEEE BCTM (Bipolar/BiCMOS Circuits and Technology Meeting) award in 2005. He has received best paper awards for the IEEE ICMTS (International Conference on Microelectronic Test Structures) in 1993 and the IEEE CICC (Custom Integrated Circuits Conference) in 2002. He is an editor of the IEEE Transactions on Electron Devices, and is or has been on the technical program committees for the IEEE BCTM, ICMTS

Semiconductors, Junctions, and Mosfet Overview
Introduction
Semiconductors
Intrinsic Semiconductors, Free Electrons, and Holes
Extrinsic Semiconductors
Equilibrium in the Absence of Electric Field
Equilibrium in the Presence of Electric Field
Semiconductors in Nonequilibrium
Quasi-Fermi Levels
Relations between Charge Density, Electric Field, and Potentials Poisson's Equation
Conduction
Transit Time
Drift
Diffusion
Total Current
Contact Potentials
Thepn Junction
Overview of the MOS Transistors
Basic Structure
A Qualitative Description of MOS Transistor Operation
A Fluid Dynamical Analog
MOS Transistor Characteristics
Fabrication Processes and Device Features
A Brief Overview of This Book
References
Problems
The Two Terminal MOS Structure
Introduction
The Flat-Band Voltage
Potential Balance and Charge Balance
Effect of Gate - Body Voltage on Surface Condition
Flat -Band Condition
Accumulation
Depletion and Inversion
General Analysis
Accumulation and Depletion
Inversion
General Relations and Regions of Inversion
Strong Inversion
Weak Inversion
Moderate Inversion
Small - Signal Capacitance
Summary of Properties of the Regions of Inversion
References
Problems
The Three Terminal MOS Structure
Introduction
Contacting the Inversion Layer
The Body Effect
Regions of Inversion
Approximate Limits
Strong Inversion
Weak Inversion
A "CB Control" Point of View
Fundamentals
The "pinchoff voltage"
References
Problems
The Four - Terminal MOS Transistor
Introduction
Transistor Regions of Operation
Complete All - Region Model
Current Equations
Simplified All - Region Models
Linearizing the Depletion Region Charge
Body -Referenced Simplified All - Region Models
Source - Referenced Simplified All - Region Models
Charge Formulation of Simplified All-Region models
Models Based on Quasi - Fermi Potentials
Regions of Inversion in Terms of Terminal Voltages
Strong Inversion
Complete Strong -Inversion Model
Body - Referenced Simplified Strong Inversion Model
Source - Referenced Simplified Strong - Inversion Model
Model Origin Summary
Weak Inversion
Special Conditions in Weak Inversion
Moderate Inversion and Single - Piece Models
Source - Referenced vs. Body - Referenced Modeling
Effective Mobility
Effect of Extrinsic Source and Drain Series Resistances
Temperature Effects
Breakdown
The p-Channel MOS Transistor
Enhancement - Mode and Depletion - Mode Transistors
Model Parameter Values, Model Accuracy, and Model Comparison
References
Problems
Small Dimension Effects
Introduction
Carrier Velocity Saturation
Channel Length Modulation
Charge Sharing
Introduction
Short - Channel Devices
Narrow - Channel Devices
Limitations of Charge Sharing Models
Drain - Induced Barrier Lowering
Punchthrough
Combining Several Small - Dimension Effects Into One Model - A Strong Inversion Example
Hot Carrier Effects
Impact Ionization
Velocity Overshoot and Ballistic Opeation
Polysilicon Depletion
Quantum Mechanical Effects
DC Gate Current
Junction Leakage
Band - to - Band Tunneling
GIDL
Leakage Currents - Examples
The Quest for Ever - Smaller Devices
Introduction
Classical Scaling
Modern Scaling
References
Problems
The MOS Transistor In Dynamic Operation - Large Signal Modeling
Introduction
Quasi - Static Operation
Terminal Currents in Quasi - Static Operation
Evaluation of Intrinsic Chargers in Quasi - Static Operation
Introduction
Strong Inversion
Moderate Inversion
Weak Inversion
All - Region Model
Depletion and Accumulation
Plots of Chargers versus VGS
Use of Intrinsic Chargers in Evaluation the Terminal Currents
Transit Time Under DC Conditions
Limitations of the Quasi - Static Model
Non - Quasi - Static Modeling
Introduction
The Continuity Equation
Non - Quasi - Static Analysis
Extrinsic Parasitics
Extrinsic Capacitances
Extrinsic Resistance
Temperature Dependence
Simplified Models
References
Problems
Small - Signal Modeling for Low and Medium Frequencies
Introduction
A Low - Frequency Small - Signal Model for the Intrinsic Part
Introduction
Small - Signal Model for the Drain - Source Current
Small - Signal Model for the Gate and Body Current
Complete Low - Frequency Small - Signal Model for the Intrinsic Part
Strong Inversion
Weak Inversion
Moderate Inversion
All - Region Models
A Medium - Frequency Small - Signal Model for the Intrinsic Part
Introduction
Intrinsic Capacitances
Including the Extrinsic Part
Noise
Introduction
White Noise
Flicker Noise
Noise in Extrinsic Resistances
Including Noise in Small - Signal Circuits
All - Region Models
References
Problems
High Frequency Small - Signals Models
Introduction
A Complete Quasi - Static Model
Complete Description of Intrinsic Capacitance Effects
Small - Signal Equivalent Circuit Topologies
Evaluation of Capacitances
Frequency Region of Validity
y- Parameter Models
Non - Quasi - Static Models
Introduction
A Non - Quasi - Static Strong - Inversion Model
Other Approximation and Higher - Oder Models
Model Comparison
High - Frequency Noise
Consideration In MOSFet Modeling for RF Applications
References
Problems
Substrate Nonuniformity and Structural Effects
Introduction
Ion Implantation and Substrate Nonuniformity
Substrate Transverse Nonuniformity
Preliminaries
Threshold Voltage
Drain Current
Buried Channel Devices
Substrate Lateral Nonuniformity
Well Proximity Effect
Stress Effects
Statistical Variability
References
Problems
MOSFET Modeling for Circuit Simulation
Introduction
Types of Models
Models for Device Analysis and Design
Device Models for Circuit Simulation
Attributes of Good Compact Models
Model Formulation
Model Implementation in Circuit Simulators
Model Testing
Parameter Extraction
Simulation and Extraction for RF Applications
Common MOSFET Models Available in Circuit Simulators
BSIM
EKV
HiSIM2
PSP
References
Problems
Appendices
Basic Laws of Electrostatic in One Dimension
Quasi - Fermi Levels and Currents
General Analysis of the Two - Terminal MOS Structure
Careful Definitions for the Limits of Moderate Inversion
General Analysis of the Three - Terminal MOS Structure
Drain Current Formulation Using Quasi - Fermi Potentials
Modeling Based on Pinchoff Voltage and Related Topics
Evaluation of the Intrinsic Transient Source and Drain Current
Quantities Use in the Derivation of the Non-Quasi -Static Y-Parameter Model
Analysis of Buried Channel Devices
MOSFET Model Benchmark Tests
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Operation and Modeling of the MOS Transistor

Operation and Modeling of the MOS Transistor

0195170156

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Author Biography

Table of Contents

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