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The Science and Engineering of Microelectronic Fabrication

ISBN: 9780195105087 | 0195105087
Format: Hardcover
Publisher: Oxford University Press, USA
Pub. Date: 2/29/1996

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SummaryTable of Contents
The Science and Engineering of Microelectronic Fabrication provides an introduction to microelectronic processing. Geared towards a wide audience, it may be used as a textbook for both first year graduate and upper level undergraduate courses and as a handy reference for professionals. The text covers all the basic unit processes used to fabricate integrated circuits including photolithography, plasma and reactive ion etching, ion implantation, diffusion, oxidation, evaporation, vapor phase epitaxial growth, sputtering and chemical vapor deposi... MORE
Part I Overview and Materials1(36)
An Introduction to Microelectronic Fabrication
3(7)
Microelectronic Technologies---A Simple Example
5... MORE
Unit Processes and Technologies
7(1)
A Roadmap for the Course
8(1)
Summary
9(1)
Semiconductor Substrates
10(27)
Phase Diagrams and Solid Solubility°
10(4)
Crystallography and Crystal Structure°
14(1)
Crystal Defects
15(6)
Czochralski Growth
21(7)
Bridgman Growth of GaAs
28(1)
Float Zone Growth
29(2)
Water Preparation and Specifications
31(1)
Summary and Future Trends
32(5)
Part II Unit Processes 1: Hot Processing and Ion Implantation37(112)
Diffusion
39(29)
Fick's Diffusion Equation in One Dimension
39(2)
Atomistic Models of Diffusion
41(4)
Analytic Solutions of Fick's Law
45(2)
Corrections to Simple Theory
47(1)
Diffusion Coefficients for Common Dopants
48(4)
Analysis of Diffused Profiles
52(7)
Diffusion in SiO2
59(1)
Diffusion Systems
60(2)
SUPREM Simulations of Diffusions Profiles
62(2)
Summary
64(4)
Thermal Oxidation
68(30)
The Deal-Grove Model of Oxidation
68(3)
The Linear and Parabolic Rate Coefficients
71(4)
The Initial Oxidation Regime
75(1)
The Structure of SiO2
76(1)
Oxide Characterization
77(7)
The Effects of Dopants During Oxidation and Polysilicon Oxidation
84(2)
Oxidation Induced Stacking Faults
86(1)
Alternative Thermal Dielectrics+
87(2)
Oxidation Systems
89(3)
SUPREM Oxidations+
92(1)
Summary
93(5)
Ion Implantation
98(28)
Idealized Ion Implantation Systems
99(5)
Coulomb Scattering°
104(1)
Vertical Projected Range
105(5)
Channeling and Lateral Projected Range
110(2)
Implantation Damage
112(5)
Shallow Junction Formation+
117(1)
Buried Dielectrics+
118(2)
Ion Implantation Systems---Problems and Concerns
120(2)
Implanted Profiles Using SUPREM+
122(1)
Summary
122(4)
Rapid Thermal Processing
126(23)
Gray Body Radiation, Heat Exchange, and Optical Absorption°
127(2)
High Intensity Optical Sources and the Reflecting Cavity
129(3)
Temperature Measurement
132(3)
Thermoplastic Stress°
135(1)
Rapid Thermal Activation of Impurities
136(2)
Rapid Thermal Processing of Dielectrics
138(1)
Silicidation and Contact Formation
139(1)
Advanced Rapid Thermal Processing Systems
140(2)
Summary
142(7)
Part III Unit Processes 2: Pattern Transfer149(132)
Optical Lithography
151(31)
Lithography Overview
151(4)
Diffraction°
155(2)
The Modulation Transfer Function and Optical Exposures
157(2)
Source Systems and Spatial Coherence
159(4)
Contact/Proximity Printers
163(3)
Projection Printers
166(7)
Advanced Mask Concepts+
173(2)
Surface Reflections and Standing Waves
175(2)
Alignment
177(1)
Summary
178(4)
Photoresists
182(21)
Photoresist Types
182(1)
Organic Materials and Polymers°
183(1)
Typical Reactions of DQN Positive Photoresists
184(2)
Contrast Curves
186(3)
The Critical Modulation Transfer Function
189(1)
Applying and Developing Photoresist
190(4)
Second Order Exposure Effects
194(1)
Advanced Photoresists and Photoresist Processes+
195(4)
Summary
199(4)
Nonoptical Lithographic Techniques+
203(28)
Interactions of High Energy Beams with Matter°
203(3)
Electron Beam Lithography Systems
206(7)
Electron Beam Lithography Summary and Outlook
213(1)
X-ray Sources
214(3)
X-ray Exposure Systems
217(2)
X-ray Masks
219(2)
Summary and Outlook for X-ray Lithography
221(1)
E-beam X-ray Resists
222(2)
Radiation Damage in MOS Devices
224(2)
Summary
226(5)
Vacuum Science and Plasmas
231(21)
The Kinetic Theory of Gasses°
231(3)
Gas Flow and Conductance
234(1)
Pressure Ranges and Vacuum Pumps
235(7)
Vacuum Seals and Pressure Measurement
242(2)
The DC Glow Discharge°
244(2)
RF Discharges
246(1)
Magnetically Enhanced and ECR Plasmas
247(1)
Radiation from Accelerated Charged Particles°
248(2)
Summary
250(2)
Etching
252(29)
Wet Etching
253(5)
Basic Regimes of Plasma Etching
258(1)
High Pressure Plasma Etching
259(7)
Ion Milling
266(3)
Reactive Ion Etching
269(3)
Damage in Reactive Ion Etching+
272(1)
Magnetically Enhanced Reactive Ion Etch (MERIE) Systems+
273(1)
Liftoff
274(1)
Summary
275(6)
Part IV Unit Processes 3: Thin Films281(104)
Physical Deposition: Evaporation and Sputtering
283(29)
Phase Diagrams: Sublimation and Evaporation°
284(1)
Deposition Rates
285(3)
Step Coverage
288(1)
Evaporator Systems: Crucible Heating Techniques
289(2)
Multicomponent Films
291(1)
An Introduction to Sputtering
292(1)
Physics of Sputtering°
293(2)
Deposition Rate: Sputter Yield
295(2)
Magnetron Sputtering
297(2)
Morphology and Step Coverage
299(1)
Sputtering Methods
300(3)
Sputtering of Specific Materials
303(3)
Stress in Deposited Layers
306(1)
Summary
307(5)
Chemical Vapor Deposition
312(28)
A Simple CVD System for the Deposition of Silicon
312(2)
Chemical Equilibrium and the Law of Mass Action°
314(4)
Gas Flow and Boundary Layersdeg;
318(4)
Evaluation of the Simple CVD System
322(1)
Atmospheric CVD of Dielectrics
323(2)
Low Pressure CVD of Dielectrics and Semiconductors in Hot Wall Systems
325(4)
Plasma Enhanced CVD of Dielectrics
329(3)
Metal CVD+
332(2)
Summary
334(6)
Epitaxial Growth
340(45)
Wafer Cleaning and Native Oxide Removal
341(4)
The Thermodynamics of Vapor Phase Growth
345(4)
Surface Reactions
349(2)
Dopant Incorporation
351(1)
Defects in Epitaxial Growth
352(2)
Selective Growth+
354(1)
Halide Transport GaAs Vapor Phase Epitaxy
355(1)
Incommensurate and Strained Layer Heteroepitaxy
355(3)
Metal Organic Chemical Vapor Deposition (MOCVD)
358(5)
Advanced Silicon Vapor Phase Epitaxial Growth Techniques
363(4)
Molecular Beam Epitaxy Technology
367(5)
BCF Theory+
372(5)
Gas Source MBE and Chemical Beam Epitaxy+
377(1)
Summary
378(7)
Part V Process Integration385(126)
Device Isolation, Contacts, and Metallization
387(37)
Junction and Oxide Isolation
387(3)
LOCOS Methods
390(4)
Trench Isolation
394(2)
Silicon on Insulator Isolation Techniques
396(2)
Semi-insulating Substrates
398(2)
Schottky Contacts
400(4)
Implanted Ohmic Contacts
404(4)
Alloyed Contacts
408(1)
Multilevel Metallization
409(6)
Planarization
415(2)
Summary
417(7)
CMOS Technologies
424(28)
Basic Long Channel Device Behavior
424(3)
Early MOS Technologies
427(1)
The Basic 3 μm Technology
427(5)
Device Scaling
432(7)
Hot Carrier Effects and Drain Engineering
439(4)
Processing for Robust Oxides
443(1)
Latchup
444(2)
Summary
446(6)
GaAs FET Technologies
452(13)
Basic MESFET Operation
452(1)
Basic MESFET Technology
453(1)
Digital Technologies
454(4)
MMIC Technologies
458(2)
MODFETs
460(2)
Summary
462(3)
Silicon Bipolar Technologies
465(25)
Review of Bipolar Devices---Ideal and Quasi-ideal Behavior
465(1)
Second Order Effects
466(2)
Performance of BJTs
468(3)
Early Bipolar Processes
471(3)
Advanced Bipolar Processes
474(6)
Hot Electron Effects in Bipolar Transistors+
480(1)
BiCMOS
481(3)
Analog Bipolar Technologies
484(1)
Summary
485(5)
Integrated Circuit Manufacturing
490(21)
Yield Prediction and Yield Tracking
491(4)
Particle Control
495(2)
Statistical Process Control
497(3)
Full Factorial Experiments and ANOVA
500(2)
Design of Experiments
502(4)
Computer Integrated Manufacturing
506(2)
Summary
508(3)
Appendices511(18)
I. Acronyms and Common Symbols
511(5)
II. Properties of Selected Semiconductor Materials
516(1)
III. Physical Constants
517(2)
IV. Conversion Factors
519(3)
V. The Complimentary Error Function
522(4)
VI. F Values
526(2)
VII. SUPREM Commands
528(1)
Index529

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