9783527410026

This work covers the status and upcoming challenges of Silicon Carbide (SiC) Electronics with special attention to industrial application. With a list of contributors reading like the "Who's Who" in SiC R&D, from industrial, governmental and academic research (GE, CREE Inc., Honda, Toshiba, Nissan, Infineon, University of Erlangen-Nurnberg, NASA, Fraunhofer ISE, Naval Research Lab, Rensselaer Polytechnic Institute, Kyoto University), this text strongly benefits from collaborations between research institutions and enterprises active in SiC crystal growth and device development.

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Peter Friedrichs is Managing Director at SiCED, a joint venture between Siemens and Infineon located in Erlangen, Germany. SiCED develops technologies for SiC power semiconductors and systems based on these devices. Their research is devoted to device design and simulation, processing technology as well as the characterization of devices including also end of life tests.

Tsunenobu Kimoto, Professor at the Department of Electronic Science and Engineering at Kyoto University, Japan, has dedicated his work to research on the growth and characterization of wide bandgap semiconductors, the process technology and physics of SiC devices. He has authored over 300 scientific publications.

Lothar Ley is recently retired as Professor of Physics and Head of the Institute of Technical Physics at the University of Erlangen, Germany. From 2002 to 2008 he was speaker of the interdisciplinary Research Unit (DFG Forschergruppe) ?Silicon carbide as semiconductor material: novel aspects of crystal growth and doping?. Alongside its experimental research on SiC, his group currently also works on Diamond, Carbon Nanotubes, and Graphene. He has authored and co-authored over 400 scientific publications.

Gerhard Pensl works with his group on the growth of SiC single crystals for high power device applications, its electrical and optical characterization, and on the investigation of multi-crystalline Si for solar cells. He is Academic Director at the Institute of Applied Physics at the University Erlangen-N?rnberg, Germany, and has authored over 300 scientific publications.

Growth, Defects, and Novel Applications
Bulk growth of SiC - review on advances of SiC vapor growth for improved doping and systematic study on dislocation evolution
Bulk and Epitaxial Growth of Micropipe-free Silicon Carbide on Basal and Rhombohedral Plane Seeds
Formation of extended defects in 4H-SiC epitaxial growth and development of fast growth technique
Fabrication of High Performance 3C-SiC Vertical MOSFETs by Reducing Planar Defects
Identification of intrinsic defects in SiC: Towards an understanding of defect aggregates by combining theoretical and experimental approaches
EPR Identification of Intrinsic Defects in 4H-SiC
Electrical and Topographical Characterization of Aluminum Implanted Layers in 4H Silicon Carbide
Optical properties of as-grown and process-induced stack-ing faults in 4H-SiC
Characterization of defects in silicon carbide by Raman spectroscopy
Lifetime-killing defects in 4H-SiC epilayers and lifetime control by low-energy electron irradiation
Identification and carrier dynamics of the dominant lifetime limiting defect in n- 4H-SiC epitaxial layers
Optical Beam Induced Current Measurements: principles and applications to SiC device characterisation
Measurements of Impact Ionization Coefficients of Electrons and Holes in 4H-SiC and their Application to Device Simulation
Analysis of interface trap parameters from double-peak conductance spectra taken on N-implanted 3C-SiC MOS capacitors
Non-basal plane SiC surfaces: Anisotropic structures and low-dimensional electron systems
Comparative Columnar Porous Etching Studies on n-type 6H SiC Crystalline faces
Micro- and Nanomechanical Structures for Silicon Carbide MEMS and NEMS
Epitaxial Graphene: an new Material
Density Functional Study of Graphene Overlayers on SiC
Power Devices and Sensors



Effect of an intermediate graphite layer on the electronic properties of metal/SiC contacts
Reliability aspects of SiC Schottky Diodes
Design, process, and performance of all-epitaxial normally-off SiC JFETs
Extreme Temperature SiC Integrated Circuit Technology
1200 V SiC Vertical-channel-JFET based cascode switches
Alternative techniques to reduce interface traps in n-type 4H-SiC MOS capacitors
High electron mobility ahieved in n-channel 4H-SiC MOSFETs oxidized in the presence of nitrogen
4H-SiC MISFETs with Nitrogen-containing Insulators
SiC Inversion Mobility
Development of SiC diodes, power MOSFETs and intellegent Power Modules
Reliability issues of 4H-SiC power MOSFETs toward high junction temperature operation
Application of SiC-Transistors in Photovoltaic-Inverters
Design and Technology Considerations for SiC Bipolar Devices: BJTs, IGBTs,and GTOs
Suppressed surface recombination structure and surface passivation for improving current gain of 4H-SiC BJTs
SiC avalanche photodiodes and photomultipliers for ultraviolet and solar-blind light detection
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Silicon Carbide, Two Volume Set

Silicon Carbide, Two Volume Set

3527410023

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