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Nanoparticle Engineering for Chemical-Mechanical Planarization: Fabrication of Next-Generation Nanodevices

by: Paik; Ungyu

Nanoparticle Engineering for Chemical-Mechanical Planarization: Fabrication of Next-Generation Nanodevices

by: Paik; Ungyu

ISBN 13:
9781420059113
ISBN 10:
1420059114
Format: Hardcover
Copyright: 02/20/2009
Publisher: CRC Press

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Summary

In the development of next-generation nanoscale devices, higher speed and lower power operation is the name of the game. Increasing reliance on mobile computers, mobile phones, and other electronic devices demands a greater degree of speed and power. As chemical mechanical planarization (CMP) progressively becomes perceived less as black art and more as a cutting-edge technology, it is emerging as the technology for achieving higher performance devices.

Preface	p. ix
The Authors	p. xi
Overview of CMP Technology	p. 1
Motivation and Background	p. 1
The Key Factors of CMP Process	p. 3
CMP Polishing Machines	p. 3
Slurry for CMP	p. 4
Pad	p. 6
Slurry Supply Equipment and Filtering Equipment	p. 6
Interlayer Dielectric CMP	p. 9
Interlayer Dielectric (ILD) CMP Process	p. 9
Rheological and Electrokinetic Behavior of Nano Fumed Silica Particle for ILD CMP	p. 9
The Unique Behavior of Concentrated Nano Fumed Silica Hydrosols	p. 10
Electrokinetic Behavior of Nano Silica Hydrosols	p. 11
Geometric Consideration	p. 12
Particle Engineering for Improvement of CMP Performance.	p. 14
Surface Modification of Silica Particle	p. 14
Improvement of ILD CMP with Modified Silica Slurry	p. 16
PAD Dependency in ILD CMP	p. 17
ILD Pattern Dependencies	p. 20
CMP Tool Dependency	p. 20
Pattern Density Dependency	p. 25
Shallow Trench Isolation CMP	p. 35
Requirement for High Selectivity Slurry	p. 35
Particle Engineering of Ceria Nanoparticles and Their Influence on CMP Performance	p. 38
Physical Properties of Ceria Particles	p. 38
STI CMP Performance with Ceria Slurries	p. 39
Influence of Crystalline Structure of Ceria Particles on the Remaining Particles	p. 40
Chemical Engineering for High Selectivity in STI CMP	p. 45
Electrokinetic Behavior of the Ceria Particle, Oxide, and Nitride Films	p. 46
STI CMP Performance in Different Suspension pH	p. 47
The Conformation of Polymeric Molecules and STI CMP Performance	p. 50
Force Measurement Using Atomic Force Microscopy for Mechanism	p. 55
Pattern Dependence of High-Selectivity Slurry	p. 60
Copper CMP	p. 79
Introduction	p. 79
High Selectivity for Copper CMP	p. 82
Copper CMP Pattern Dependence	p. 88
Dishing Dependency on Feature Size and Pattern Density	p. 88
Pattern Effects on Planarization Efficiency of Cu Electropolishing	p. 94
Cu Pad Size and Linewidth Affect Dishing	p. 102
Pattern Dependence of Dishing and Erosion Phenomena	p. 104
TaN Cap Process for Cu Corrosion Prevention and Thermal Stability Improvement	p. 105
Nanotopography	p. 111
What Is Nanotopography?	p. 111
Why Nanotopography Is Important	p. 113
Impact of Nanotopography on CMP	p. 114
General Introduction	p. 114
Spectral Analysis of the Impact of Nanotopography on Oxide CMP and Fourier Transform Method	p. 116
Impact of Nanotopography on Silicon Wafer on Oxide CMP	p. 120
Wafering Method Dependency of Impact of Nanotopography on Oxide CMP	p. 120
Slurry Characteristic Dependency of Impact of Nanotopography on Oxide CMP	p. 126
Effect of Wafer Nanotopography on Remaining Polysilicon Thickness Variation after Polysilicon CMP	p. 130
Effect of VT Variation of Wafer Nanotopography on Remaining Polysilicon Thickness Variation after Polysilicon CMP	p. 131
Equipment in Measuring the Nanotopography	p. 136
Introduction to General Equipment Used in the Measurement of Nanotopography	p. 136
SQM™ (Surface Quality Monitor), from ADE, USA	p. 138
NanoMapper, from ADE Phase Shift, USA	p. 139
DynaSearch, from Raytex, Japan	p. 141
Line Profile Comparison among Three Instruments	p. 143
Calibration among the Standard Deviations of Height Change Measured by Three Kinds of Instruments	p. 143
Novel CMP for Next-Generation Devices	p. 149
The Progress of Semiconductor Devices upon Current Demand	p. 149
Complementary Metal-Oxide Semiconductor (CMOS) Memory	p. 151
Noble Metal CMP for DRAM	p. 152
Poly Si CMP for NAND Flash Memory	p. 154
Novel CMP for New Memory	p. 163
GST CMP for PRAM	p. 163
Novel CMP for ReRAM	p. 170
References	p. 171
Index	p. 177
Table of Contents provided by Ingram. All Rights Reserved.

Amazon no longer offers textbook rentals. We do!

Nanoparticle Engineering for Chemical-Mechanical Planarization: Fabrication of Next-Generation Nanodevices

Nanoparticle Engineering for Chemical-Mechanical Planarization: Fabrication of Next-Generation Nanodevices

9781420059113

1420059114

Summary

Table of Contents

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